Multi-wavelength semiconductor laser
文献类型：专利
| 作者 | OKUDA MASAHIRO |
| 发表日期 | 1990-04-24 |
| 专利号 | JP1990110986A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To enable the manufacture of a semiconductor layer of this design in a simple process by a method wherein two or more distributed reflection type semiconductor laser units are arranged in rows on a substrate, and the waveguide paths forming distributed reflectors of the semiconductor laser units are made to differ from each other in channel width. CONSTITUTION:A semiconductor laser unit is composed of a ridge structure where the constriction of a current and the trapping of light are executed. The regions of a ridge structure of the laser unit, which extend behind an active layer provided with electrodes 6, 7, and 8, are provided to serve as like Bragg reflection type waveguide paths 3, 4, and 5 which function as a resonator respectively taking advantage of the Bragg reflection of light emitted from the active layer, and their channel widths are set to be differ from each other corresponding to the wavelengths of projecting laser rays. In result, the equivalent refractive indexes neff of light which propagates through the waveguide paths are different from each other, and provided that the pitch of a diffraction grating is. LAMBDA, a Bragg reflection wavelength. lambdag is represented by a formula, lambdag=LAMBDA.neff. Therefore, laser units different from each other in a Bragg reflection wavelength can be manufactured by varying neff through the change of the channel width of a waveguide path. |
| 公开日期 | 1990-04-24 |
| 申请日期 | 1988-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83616]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | OKUDA MASAHIRO. Multi-wavelength semiconductor laser. JP1990110986A. 1990-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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