Optical amplifier
文献类型：专利
| 作者 | FUJIWARA MASAHIKO; NISHI KENICHI |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179488A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical amplifier |
| 英文摘要 | PURPOSE:To realize an optical amplifier large in gain band width by a method wherein an active layer comprising two or more quantum well structures different from each other in well thickness is provided to a semiconductor laser type optical amplifier. CONSTITUTION:A buffer layer 2 formed of an n-type A GaAs/AlGaAs multiple quantum well(MQW) layer 2, an n-type A GaAs clad layer 3, an MQW active layer 4, a p-type AlGaAs intermediate layer 5, a p-type AlGaAs clad layer 6, and a p-type A GaAs cap layer 7 are formed on an n-type GaAs substrate The above MQW active layer 4 is composed of five periods of GaAs barriers and GaAs well layers different from each other in quantum well thickness. By these processes, a gain property constant over a wide frequency range can be obtained. And, a quantum well structure being employed, the efficiency of the carrier density toward an injecting current can be made high and an amplifier of this design can be operated with a low current. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83619]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASAHIKO,NISHI KENICHI. Optical amplifier. JP1989179488A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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