Semiconductor light emitting device
文献类型：专利
| 作者 | KONDO MASATO; NAKAJIMA KAZUO |
| 发表日期 | 1989-05-23 |
| 专利号 | JP1989130584A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To make wavelengths of emitted light short, by forming a plurality of thin layers of distorted superlattice whose composition ratio is different from the lattice constant of GaAs substrate, between the GaAs substrate and a lower clad layer. CONSTITUTION:On a GaAs substrate 11 is formed a distorted supperlattice 12, on which a lower clad layer 13, a GaaIn1-aP (a>0.51) active layer 14 and a upper clad layer 15 are formed. The distorted superlattice 12 is constituted of either a plurality of thin layers of GaxIn1-xAs/GaAsyP1-y distorted superlattice different from the lattice constant of the GaAs substrate 11 or a plurality of thin layers of GazIn1-zP distorted lattice. The distorted supperlattice 12 is used as a buffer layer, and the active layer 14 of GaaIn1-aP smaller than the lattice constant of the GaAs substrate 11 is formed, thereby realizing large energy band gap and emission of light having short wavelengths. |
| 公开日期 | 1989-05-23 |
| 申请日期 | 1987-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83623]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO,NAKAJIMA KAZUO. Semiconductor light emitting device. JP1989130584A. 1989-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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