Semiconductor laser device
文献类型：专利
| 作者 | IKUWA YOSHITO; AOYANAGI TOSHITAKA; IKEDA KENJI |
| 发表日期 | 1988-08-05 |
| 专利号 | JP1988190394A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To control a threshold current and a light output intensity independently by a method wherein a current blocking layer with a current transmitting window and a light absorbing layer with a light transmitting window are provided separately. CONSTITUTION:An injection current flowing from a P electrode 9 to an n electrode 10 passes convergently through a current transmitting window 7 domain when a forward voltage is applied between the p electrode 10. Owing to this, the current dispersion in an active layer 1 is restricted by a stripe width W1 of the current transmitting window 7. A portion of light generated by the injection current in the active layer 1 oozes out of a clad layer 3 toward a current blocking layer 6 and is absorbed into a light absorbing layer. A current confinement action restricted by the stripe width W1 and a light trapping action restricted by a stripe width W2 coact to enable a laser oscillation to start with a comparatively small threshold current. Furthermore, the stripe width W1 of the current transmitting window 7 and the stripe width W2 of the light transmitting window 13 can be varied separately in dimension, whereby the threshold current and a light output intensity are controlled independently. |
| 公开日期 | 1988-08-05 |
| 申请日期 | 1987-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83624]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,AOYANAGI TOSHITAKA,IKEDA KENJI. Semiconductor laser device. JP1988190394A. 1988-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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