半導体レーザ装置
文献类型：专利
| 作者 | 大歳 創; 坂野 伸治; 魚見 和久; 茅根 直樹; 佐々木 真二 |
| 发表日期 | 2001-06-22 |
| 专利号 | JP3202985B2 |
| 著作权人 | 日本オプネクスト株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To make it possible to perform highly efficient continuous oscillation even at high temperature by forming a semiconductor layer whose forbidden band width is larger than the forbidden band width of a semiconductor substrate or a semiconductor constituting a light emitting region as a flat layer at the outer surface part of the light emitting region in at least one part of a current blocking layer which is formed at the peripheral part of an active layer. CONSTITUTION:This device has a P-InP clad layer 7 in the central part (groove 6) on a P-type InP substrate 1, a crescent type active layer 8 comprising InGaAsP and a part on an N-InP current block layer 9. An N-InP layer 3, a P-InP layer 3, P-In0.52Al0.48As4 a current block layer comprising N-InP layer 5 are sequentially formed on the both sides of the groove 6, i.e., the light emitting region, on the upper surface of the substrate The semiconductor layer 4 which is larger than the forbidden band width of InP is provided so as to block the current injection into the P-InP current block layer 2 from the N-InP clad layer 9. Therefore, the generation of leak currents is less even at high temperature, and the laser oscillation can be performed at high efficiency. |
| 公开日期 | 2001-08-27 |
| 申请日期 | 1990-08-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本オプネクスト株式会社 |
| 推荐引用方式 GB/T 7714 | 大歳 創,坂野 伸治,魚見 和久,等. 半導体レーザ装置. JP3202985B2. 2001-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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