Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | MOGI NAOTO; WATANABE YUKIO; SHIMADA NAOHIRO |
| 发表日期 | 1985-04-17 |
| 专利号 | JP1985066892A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To contrive to improve the reliability by enabling the generation of the effect of a built-in waveguide even when a clad layer between an active layer and a current block layer is thickened by a method wherein the impurity concentration of the p type clad layer is controlled. CONSTITUTION:A part of a p type clad layer 14 under a stripe groove is made as a p type layer having a lower concentration than the other part, and made to have a large refractive index. Therefore, it becomes unnecessary to penetrate the light quided by the active layer 13 to the current block layer 15 in order to allow the effect of a built-in waveguide. In other words, the light guided by the active layer 13 becomes sensitive to the difference in refractive index due to the difference in impurity concentration in the clad layer 14, and is guided to the region immediately under the stripe having a low p type impurity concentration in the direction horizontal to the junction surface, therefore can generate the effect of a built-in waveguide even when the thickness of the layer 14 is increased. As a result, the distance between the layer 13 and the surface of crystal growth can be increased, resulting in the improvement of the reliability. |
| 公开日期 | 1985-04-17 |
| 申请日期 | 1983-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83633]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,WATANABE YUKIO,SHIMADA NAOHIRO. Semiconductor laser device and manufacture thereof. JP1985066892A. 1985-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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