Semiconductor laser device
文献类型：专利
| 作者 | IKEDO, NORIO; KAWAGUCHI, MASAO; YURI, MASAAKI |
| 发表日期 | 2011-08-16 |
| 专利号 | US8000365 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2 |
| 公开日期 | 2011-08-16 |
| 申请日期 | 2009-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | IKEDO, NORIO,KAWAGUCHI, MASAO,YURI, MASAAKI. Semiconductor laser device. US8000365. 2011-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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