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文献类型：专利
| 作者 | MATSUI KANEKI; TANETANI MOTOTAKA; MATSUMOTO AKIHIRO |
| 发表日期 | 1991-05-24 |
| 专利号 | JP1991034875B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser array device emitting laser beams having a large output according to a radiant pattern at a single peak by making the reflectivity of the cleavage end surface of an intermediate region between active waveguides larger than that of the resonator end surfaces of the active waveguides. CONSTITUTION:In an index waveguide type semiconductor laser array, the reflectivity of an intermediate region can be made larger than that of an active waveguide section by forming multilayer films on the cleavage plane of the intermediate region. Consequently, resonator mirror loss at a 0 deg. positional mode can be made largely lower than that at a 180 deg.-phase mode, and loss at a 0 deg.-phase mode can be made smaller than the 180 deg.-phase mode, thus making oscillation threshold gains at the 0 deg.-phase mode smaller than the 180 deg.-phase mode. Accordingly, a semiconductor laser array device emitting laser beams synchronizing at a 0 deg.-phase can be realized, and high-output laser beams having one far field pattern up to a high injection region can be acquired. |
| 公开日期 | 1991-05-24 |
| 申请日期 | 1985-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83646]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MATSUI KANEKI,TANETANI MOTOTAKA,MATSUMOTO AKIHIRO. -. JP1991034875B2. 1991-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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