Semiconductor light emitting element
文献类型：专利
| 作者 | KASHIMA YASUMASA; MATOBA AKIHIRO; KOBAYASHI MASAO |
| 发表日期 | 1991-09-12 |
| 专利号 | JP1991209787A |
| 著作权人 | 沖電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To reduce the leakage current to the light absorbing layer at a light absorbing section so as to improve the light absorbing effect of the light absorbing layer by providing the first and second electrodes which are short-circuited to each other in such a way that the first and the second electrodes are respectively attached to the top and bottom sides of the light absorbing layer directly or through semiconductor layers. CONSTITUTION:The first electrode 51 and second electrode 53 which are short- circuited to each other are respectively attached to the top and bottom sides of a light absorbing layer 33b in such a way that the electrode 51 is attached through an N-InP clad and N-InGaAsP contact layers 35 and 37 and the electrode 53 through a P-InP clad layer 31 and P-InP substrate. When a desired current is made to flow to a light emitting section 11 through a header anode 67, light emitting layer 33a, and header cathode 65, desired light is obtained. On the other hand, since the electrodes 51 and 53 (P-side electrode 41) are short- circuited to each other in a light absorbing section 13 through a gold wire 69a, no electric current flows to the light absorbing layer 33b and only light absorption efficiently takes place in the layer 33b. |
| 公开日期 | 1991-09-12 |
| 申请日期 | 1990-01-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 沖電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | KASHIMA YASUMASA,MATOBA AKIHIRO,KOBAYASHI MASAO. Semiconductor light emitting element. JP1991209787A. 1991-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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