Method of fabricating semiconductor laser
文献类型：专利
| 作者 | NAGAI, YUTAKA; TADA, HITOSHI |
| 发表日期 | 1998-07-28 |
| 专利号 | US5786234 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor laser |
| 英文摘要 | A method of fabricating a semiconductor laser includes successively epitaxially growing on a first conductivity type semiconductor substrate, a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer having a relatively high etching rate in an etchant, a second conductivity type etch stopping layer having a relatively low etching rate in the etchant, a second conductivity type second upper cladding layer, and a second conductivity type first contact layer; forming a stripe-shaped mask on the first contact layer; removing portions of the first contact layer and the second upper cladding layer in a first wet etching step to expose the etch stopping layer; removing portions of the second upper cladding layer in a second wet etching step to form a stripe-shaped ridge structure having a reverse mesa cross section without an intermediate construction; growing a first conductivity type current blocking layer contacting both sides of the ridge structure; and after removal of the mask, growing a second conductivity type second contact layer on the current blocking layer and on the first contact layer. The angle between the side wall of the ridge and the etch stopping layer is an acute angle so the stripe-shaped ridge structure has a perfect reverse mesa cross section and is narrowest proximate the active layer. |
| 公开日期 | 1998-07-28 |
| 申请日期 | 1997-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83653]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAGAI, YUTAKA,TADA, HITOSHI. Method of fabricating semiconductor laser. US5786234. 1998-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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