Optoelectronic integrated circuit
文献类型：专利
| 作者 | NAKAMURA AKIRA; SUGINO TAKASHI; YOSHIKAWA AKIO; KUME MASAHIRO; HIROSE MASANORI; YAMAMOTO ATSUYA |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196893A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit |
| 英文摘要 | PURPOSE:To reduce the electrostatic capacitance of a laser oscillation section, and to enable modulation at high speed by isolating an epitaxial layer for a laser into the laser oscillation section and a bonding forming section by a trench reaching up to a semi-insulating substrate. CONSTITUTION:A buffer layer 2, an N-type active layer 3 for an FET, N layers 5 as a source and a drain, an N-type clad layer 7, a laser active layer 8, a P-type clad layer 9 and a P type cap layer 10 are grown onto a GaAs substrate 1 in an epitaxial manner. One parts of the layers 5-10 are removed, thus shaping an FET forming region for drive. A striped trench reaching the substrate 1 is formed to a laser constituting section, and SiO2 layers 11 are shaped into the trench and onto the surface of the laser constituting section. An Al gate electrode 4, a source electrode 6 and an electrode 12 for a laser are formed. The width W of a laser oscillation section can be narrowed (such as 5mum), thus lowering capacitance, then allowing modulation at high speed. A bonding section and the laser oscillation section are isolated, thus preventing the deterioration of a laser section due to bonding. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAMURA AKIRA,SUGINO TAKASHI,YOSHIKAWA AKIO,et al. Optoelectronic integrated circuit. JP1989196893A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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