半導体レーザ装置
文献类型：专利
| 作者 | 宮沢 誠一 |
| 发表日期 | 1996-03-29 |
| 专利号 | JP1996034330B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To obtain an excellent current narrowing effect and a light confinement effect by a method wherein a substrate having a groove or a protrusion whose cross section is a trapezoidal shape is used as a substrate and a semiconductor layer contacting an amphoteric impurity is used. CONSTITUTION:The following are laminated one after another on a p-GaAs substrate 51 where a groove has been formed on a (011) plane: an Si-doped GaAs buffer layer 52; a Be-doped AlGaAs lower-part clad layer 53; an active layer 54 as a multilayer quantum well where five undoped AlGaAs layers as well layers and four undoped AlGaAs layers as barrier layers have been laminated alternately; an Si-doped AlGaAs upper-part clad layer 55; an Sn-doped GaAs contact layer 56; then, an n-type electrode 57 and a p-type electrode 58 are formed on the both sides. When Si-doped GaAs is made to grow on the groove in the substrate 51, only a part 60 formed on slopes becomes a p-type; a part formed on the (011) plane changes to an n-type. When a forward bias current is applied to the electrodes 57, 58, the electric current flows as shown by the arrows 59; a carrier is concentrated in the layer 54 in the groove. |
| 公开日期 | 1996-03-29 |
| 申请日期 | 1988-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83662]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 宮沢 誠一. 半導体レーザ装置. JP1996034330B2. 1996-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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