Semiconductor laser
文献类型：专利
| 作者 | HIRATA SHOJI; NARUI HIRONOBU; MORI YOSHIFUMI |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225884A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To construct an SDH of a low threshold current and hence provide a single oscillation semiconductor laser by forming a striped mesa protrusion and a diffraction grating, and thereafter forming each semiconductor laser by a series of epitaxial growths. CONSTITUTION:After formation of a striped mesa protrusion 12 for a compound semiconductor 11 and a diffraction grating 13, semiconductor lasers 14-17 are formed by a series of epitaxial growths. Hereby, a stable, excellent characteristic semiconductor laser is yielded and its workability is improved. Further, a striped active layer 15 on the striped mesa protrusion 12 is surrounded by cladding layers 14, 16 and a current blocking layer 17 and a p-n-p-n thyristor is formed on opposite sides of the active layer 15. Hereby, a low threshold current SDH(Separate Double Hetero Junction) can be constructed a signal oscillation semiconductor laser by a distributed feedback type semiconductor laser (DFB) operation can be yielded. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83667]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | HIRATA SHOJI,NARUI HIRONOBU,MORI YOSHIFUMI. Semiconductor laser. JP1991225884A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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