Manufacture of semiconductor device
文献类型：专利
| 作者 | NAKAO ICHIROU; HATADA KENZOU |
| 发表日期 | 1984-09-20 |
| 专利号 | JP1984167086A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To simplify the manufacturing process to a great extent by a method wherein the active layer of a semiconductor laser and the base layer of a bi- polar transistor are made as the same grown layer. CONSTITUTION:First, an N type InP epitaxial layer 2 serving as a part of the laser containing Te and as a collector, a P type InGaAaP epitaxial layer 3 serving as the active layer of the laser containing Zn and as a base, and further an N type InP epitaxial layer 4 serving as the other part of the laser containing Te and an emitter region are successively grown on an N type InP substrate Thereafter, a diffused region 10 serving as the other part of the laser, and next an active layer 3a, a base region 3b, a region 4a, and an emitter region 4b are formed. Then, Au/Zn is vapor-deposited as an N side electrode by leaving Au/Zn electrodes 7 and 9. Such a manner enables to simplify the manufacturing process to a great extent. |
| 公开日期 | 1984-09-20 |
| 申请日期 | 1983-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83671]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIROU,HATADA KENZOU. Manufacture of semiconductor device. JP1984167086A. 1984-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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