Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | HORIKOSHI YOSHIHARU; OKAMOTO HIROSHI |
| 发表日期 | 1985-06-06 |
| 专利号 | JP1985101989A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a multiple quantum well laser having a high output and long life by forming a uniform mixed crystal region to a multiple quantum well structure section and forming a cleavage plane constituting a resonator mirror to the mixed crystal region. CONSTITUTION:An n type Ga1-xAs layer 2 is formed on an n type GaAs substrate crystal 1, and a superlattice layer 3 consisting of N+1 GaAs quantum well layers and N AlyGa1-yAs barrier layers, a p type AlxGa1-xAs layer 4 and a p type GaAs layer 5 are shaped on the layer 2 in succession. A nitride film 6 or an oxide film is patterned to form striped windows 7, and Zn is diffused. Consequently, the superlattice layers in Zn diffusion regions 8 are broken, and uniform mixed crystals 9 are obtained. The crystal is cloven in the vicinity 11 of the center along the stripes 7, and resonator mirrors are formed by the cleavage planes 12. An active region is not exposed in the cleavage planes 12 in a semiconductor laser manufactured in this manner and the laser is protected by the uniform mixed crystals shaped by Zn diffusion, thus obtaining a stable high output. |
| 公开日期 | 1985-06-06 |
| 申请日期 | 1983-11-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | HORIKOSHI YOSHIHARU,OKAMOTO HIROSHI. Semiconductor laser and manufacture thereof. JP1985101989A. 1985-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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