Semiconductor laser
文献类型：专利
| 作者 | GOTO KATSUHIKO; SAKAKIBARA YASUSHI; NAMISAKI HIROBUMI; HIGUCHI HIDEYO; OMURA ETSUJI |
| 发表日期 | 1986-12-01 |
| 专利号 | JP1986270884A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make the process of the crystal growth by one time and a simple axis mode operation possible, by forming on the side of the mesa stripe of substrate the current blocking layer having the narrower forbidden band width than that of the active layer, and providing the diffraction lattice on the top of the stripe. CONSTITUTION:At the central part of the P-type InP substrate 1 there is a mesa stripe 8, on the top of which the diffraction lattice 9 is formed. On the substrate 1 of both sides of the stripe 8, the N type InGaAs current blocking layer 2 is formed, on which the following three layers are formed; P-type InGaAsP wave guide layer 3, InGaAs active layer 4 and N-type InP clad layer 5. The layer 3 and the layer 5 have the wider forbbiden band width than that of the layer 4, and the layer 2 has the narrower forbbiden band width than that of the layer 4. This semiconductor laser concentrates the current in the part of the layer 4 which is right above the stripe. Moreover, in the case of high speed modulation by the lattice 9, the single axis mode operation is available. This element is also possible to be processed by the crystal growth of one time treatment. |
| 公开日期 | 1986-12-01 |
| 申请日期 | 1985-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83676]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | GOTO KATSUHIKO,SAKAKIBARA YASUSHI,NAMISAKI HIROBUMI,et al. Semiconductor laser. JP1986270884A. 1986-12-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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