Semiconductor laser and its manufacture
文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1991-08-26 |
| 专利号 | JP1991195077A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having a low oscillation threshold and excellent characteristics by a method wherein a double-hetero structure is provided and the energy gap of an active layer is changed along a layer thickness direction without changing the composition of the active layer. CONSTITUTION:An n-type (Al0.4Ga0.6)0.5In0.5P cladding layer 2 and an undoped Ga0.5In0.5 active layer 3 are built up on an n-type GaAs substrate Successively, a p-type (Al0.4Ga0.6)0.5In0.5P cladding layer 4 and an n-type GaAs current blocking layer 5 are built up and the surface is selectively masked to remove the part of the n-type GaAs current blocking layer 5 corresponding to a current injection stripe part 7. Finally, a p-type GaAs cap layer 6 is built up and a p-type side electrode 8 and an n-type side electrode 9 are formed. Then the laminated unit is cleft into individual semiconductor lasers. Thus, by applying a non- reflective coating to the end surface of an element, creating an oscillation by an external resonator and providing a wavelength dispersing element in the resonator to make a wavelength variable, the variable wavelength range can be widened. With this constitution, a semiconductor laser having a wide variable wavelength range and a low threshold can be obtained. |
| 公开日期 | 1991-08-26 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83683]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Semiconductor laser and its manufacture. JP1991195077A. 1991-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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