Semiconductor laser diode
文献类型：专利
| 作者 | TANAKA HIDENAO; SHIMOKAWA FUSAO; SAWADA YASUSHI; HARA SHINJI |
| 发表日期 | 1991-04-16 |
| 专利号 | JP1991091278A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | PURPOSE:To enable the title item, which is compact, can be manufactured easily, and is used as a light source for projecting two beams which can be interfered each other in the same direction, by providing a bent waveguide channel part which becomes a total reflection mirror at one part of the waveguide channel part and by providing a light-irradiation end surface for irradiating laser light of the waveguide channel part which is bent in the same surface direction. CONSTITUTION:A laser diode structure consists of an Se doped Al GaAs clad layer 7, a grated index light entrapment Al GaAs layer 8, a GaAs activation layer 9, a grated index light entrapment Al GaAs layer 10, a Zn doped Al GaAs clad layer 11, and a Zn doped GaAs cap layer 12 are formed by one growth. After that, an upper electrode 13 is formed by lithography of an electrode pattern and deposition and lift-off of Au. Then, a resist pattern which is thicker than this electrode 13 is formed, and etching is performed to a printed-circuit board with it as a mask, thus forming a waveguide channel pattern 14 and a total reflection mirror 15. Then, after polishing the printed circuit board, a rear-surface Au electrode 16 is formed by deposition and heat treatment is performed. After that, a laser light irradiation end surface 17 is formed by cleavage. |
| 公开日期 | 1991-04-16 |
| 申请日期 | 1989-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | TANAKA HIDENAO,SHIMOKAWA FUSAO,SAWADA YASUSHI,et al. Semiconductor laser diode. JP1991091278A. 1991-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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