Optical integrated circuit
文献类型：专利
| 作者 | SERIZAWA HIROMOTO; TANIUCHI TETSUO |
| 发表日期 | 1985-02-19 |
| 专利号 | JP1985032029A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit |
| 英文摘要 | PURPOSE:To unify the titled circuit with a laser light source or a photodetector easily by forming a controlling electrode and a light direction converting part on plural optical waveguides constituted like laminated layers with compound semiconductors. CONSTITUTION:An n type InP clap layer 19 is epitaxially grown on an n type InP semiconductor substrate 18 and then the 1st optical waveguide layer 20 consisting of n type InxGa1-xAsyP1-y is epitaxially grown on the clad layer 19 so that their gratings are matched. In addition, a p type InP layer 21, the 2nd optical waveguide layer consisting of n type InxGa1-xAsyP1-y and a p type InP clad layer 23 are successively grown. A reflector 24 constituted by a dielectric element such as SiO2 or obtained by superposing metal or the like on the dielectric element is formed up to the 2nd optical waveguide part on a V-shaped groove. When voltage is applied so that pn junction is reversely biased between electrodes 25 and 17, a part or the whole light l2 out of light 26 transmitted through the 1st optical waveguide is transferred to the 2nd optical waveguide layer 22. The light made incident on the 2nd optical waveguide layer 22 is reflected by the reflector 24 in the direction of the substrate InP and light l3 is taken out to the outside of the crystal. Since a directional coupler is constituted like laminated layers and two waveguides can be completely separated in this method, the circuit can be formed on a small area. |
| 公开日期 | 1985-02-19 |
| 申请日期 | 1983-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83685]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SERIZAWA HIROMOTO,TANIUCHI TETSUO. Optical integrated circuit. JP1985032029A. 1985-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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