Semiconductor laser device
文献类型：专利
| 作者 | IKEDA SOTOMITSU |
| 发表日期 | 1989-06-19 |
| 专利号 | JP1989155675A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain laser rays variant in a direction of linear polarization and wavelength by a method wherein two or more semiconductor lasers provided with active layers epitaxially grown through a vapor phase growth are laminated on a substrate provided with surfaces different from each other in a facial index. CONSTITUTION:A resist film is provided onto a P-GaAs substrate 21 whose upper face is a (001) face, and the resist film is removed after the formation of a cutout with an angle of 45 degrees formed through a wet etching on the substrate 2 Next, an epitaxial film 24 and a metal mask 25 are formed, a resist film 26 is formed thereon so as to etch the metal mask 25 using the resist film 26 as a mask, and a Zn diffused region 22 is formed after the removal of the resist film 26. Then, a SiO2 film 12 is formed after the metal mask 25 is eliminated, an Au/Au-Ge layer 11a is evaporated after a current injecting window section is bored, a resist film 27 is formed thereon, an n-side electrode 11 is constructed through etching, and a P-side electrode 13 is provided after the removal of the resist film 27. |
| 公开日期 | 1989-06-19 |
| 申请日期 | 1987-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU. Semiconductor laser device. JP1989155675A. 1989-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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