Semiconductor light emitting device
文献类型：专利
| 作者 | KIHARA KATSUHIRO |
| 发表日期 | 1990-02-05 |
| 专利号 | JP1990034982A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To provide the selectivity of a TE wave and a TM wave by transmitting linearly only the TE wave from an active layer to a clad layer at a bent part in a lambda/4 DFB laser, propagating the TM wave toward a bent active layer, and absorbing the TM wave without providing an electrode on the bent active layer. CONSTITUTION:The reflectivity R of a TE wave(Transverse-Electric Wave) is gradually decreased as an incident angle theta is increased, and becomes '0' at a Brewster angle thetaB, is abruptly increased therethrough, and fully reflected at a critical angle thetaC. On the other hand, the reflectivity R of a TM wave(Transverse-Magnetic Wave) is simply gradually increased as the incident angle theta, is abruptly increased through the angle thetaB, and fully reflected at the angle thetaC. Thus, the reflectivity of the TE wave becomes '0' when it is incident at the Brewster angle in the boundary between an active layer 5A and a clad layer 6 to be transmitted. On the other hand, the TM wave is bent toward the bent layer 5A, and since no electrode is provided in this region, no light emission occurs, and the TM wave is absorbed into the active layer. Thus, the TM wave is absorbed in the lambda/4 DFB(distributed feedback type) laser, and can be oscillated only with the TE wave. |
| 公开日期 | 1990-02-05 |
| 申请日期 | 1988-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83690]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO. Semiconductor light emitting device. JP1990034982A. 1990-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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