Phased array semiconductor laser
文献类型：专利
| 作者 | THORNTON, ROBERT L.; BURNHAM, ROBERT D. |
| 发表日期 | 1993-10-20 |
| 专利号 | EP0206496B1 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Phased array semiconductor laser |
| 英文摘要 | @ A phased array semiconductor laser provides fundamental or preferred first supermode operation wherein laser fabrication is carried out via a single, continuous fabricating process followed by impurity-induced disordering (IID). Fundamental supermode selection is accomplished by providing a multiquantum well superlattice as a cladding layer in the phased array laser structure in combination with the conventional single semiconductor cladding- layer, which is followed by spatially-disposed impurity-induced disordering regions extending through the superlattice to form spatial regions capable of providing higher gain compared with adjacent regions without inpurity induced disordering contain unspoiled superiattice regions that provide higher real index waveguiding compared with the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared with the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred first supermode operation. |
| 公开日期 | 1993-10-20 |
| 申请日期 | 1986-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83698]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | THORNTON, ROBERT L.,BURNHAM, ROBERT D.. Phased array semiconductor laser. EP0206496B1. 1993-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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