Semiconductor laser device
文献类型：专利
| 作者 | YAMAMOTO, SABURO; MORIMOTO, TAIJI; MIYAUCHI, NOBOYUKI; MAEI, SHIGEKI |
| 发表日期 | 1988-12-13 |
| 专利号 | US4791649 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation on a V-stripe channeled substrate having a current-blocking layer thereon. The active layer further includes regions by means of which carriers within the active layer are prevented from diffusing outside of the active layer. These regions are disposed facing each other with an optical waveguide therebetween which is formed by the absorption of light by the portions of the current-blocking layer which are positioned at both sides of the striped channel. The distance between the regions is narrower than the width of the optical waveguide in the vicinity of both facets and wider than the width of the optical waveguide inside of both facets. |
| 公开日期 | 1988-12-13 |
| 申请日期 | 1986-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83708]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, SABURO,MORIMOTO, TAIJI,MIYAUCHI, NOBOYUKI,et al. Semiconductor laser device. US4791649. 1988-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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