Semiconductor light emitting device
文献类型：专利
| 作者 | KAMITE KIYOTSUGU; YAMAGOSHI SHIGENOBU |
| 发表日期 | 1987-04-15 |
| 专利号 | JP1987081782A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To maintain low threshold current and high reliability without increasing leak current due to, e.g., thermal damage, by controlling the width of an active layer with good reproducibility by the action of a clad layer, which is a basis of the active layer, and covering the active layer with the clad layer immediately after the formation of the active layer. CONSTITUTION:In a semiconductor layer or substrate (e.g., an semi-insulating InP layer 2), whose surface index of the main surface is (100), the following parts are provided: a groove (e.g., a groove 2A), in which the side walls formed in the direction approximately along a crystal axis (011) form an inverted mesa shape; a one-conductivity type clad layer (e.g., an N-type InP clad layer 3), in which the groove, whose side walls have the inverted mesa shape, is buried and the surface is flattened in the vicinity of the surface of the semiconductor layer; a stripe shaped active layer (e.g., an InGaAsP active layer 5), which is formed on the one-conductivity type clad layer; and a reverse conductivity type clad layer (e.g., a P-type InP clad layer 6), which is formed by surrounding the upper surface and the side surface of the active layer. Therefore, the active layer is not subject to thermal damage as a matter of course, and the width of the active layer can be controlled with good reproducibility. |
| 公开日期 | 1987-04-15 |
| 申请日期 | 1985-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KAMITE KIYOTSUGU,YAMAGOSHI SHIGENOBU. Semiconductor light emitting device. JP1987081782A. 1987-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。