Semiconductor laser
文献类型：专利
| 作者 | SASAI, YOICHI; UEMURA, NOBUYUKI; KAMIYAMA, SATOSHI; KUBO, MINORU; NISHIKAWA, TAKASHI |
| 发表日期 | 1997-04-08 |
| 专利号 | US5619520 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn1-xMgxS1-ySey (0 |
| 公开日期 | 1997-04-08 |
| 申请日期 | 1995-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | SASAI, YOICHI,UEMURA, NOBUYUKI,KAMIYAMA, SATOSHI,et al. Semiconductor laser. US5619520. 1997-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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