Semiconductor laser device and its manufacture
文献类型：专利
| 作者 | SEMURA SHIGERU; KURODA TAKARO; OOTA TSUNEAKI; NAKAJIMA HISAO |
| 发表日期 | 1986-10-21 |
| 专利号 | JP1986236187A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its manufacture |
| 英文摘要 | PURPOSE:To obtain the laser light oscillation with arranged phase from several light emitting regions, by separating the active layer of a quantum well type structure in the direction of the laser resonator, with a semiconductor which has the average composition of two kinds of compound. CONSTITUTION:When the electron current and the positive hole current are supplied to the N-side electrode 10 and the P-side electrode 11 respectively, the current concentrates to the active layer (light emitting region) 8 of each impurity diffusion region 7 of quantum well type structure. As both sides of each light emitting region 8 are constituted with the impurity diffusion region 6 in which the quantum well structure is alloyed, their refraction indexes are smaller than that of the light emitting region 8. The refractive indices of the upper and the lower clad layers 3 and 2 are also smaller than that of the light emitting region 8, so the single mode laser light oscillates in the transverse direction, and the light propagates in the light emitting region 8 being confined in the layer. Thus, by the small threshold current for oscillation, the transverse single mode laser light oscillation with arranged phase is obtained, and the light output can be increased according to the number of light emitting regions. |
| 公开日期 | 1986-10-21 |
| 申请日期 | 1985-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83725]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | SEMURA SHIGERU,KURODA TAKARO,OOTA TSUNEAKI,et al. Semiconductor laser device and its manufacture. JP1986236187A. 1986-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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