Semiconductor light emitting element
文献类型：专利
| 作者 | ONAKA SEIJI; SHIBATA ATSUSHI |
| 发表日期 | 1987-01-31 |
| 专利号 | JP1987023184A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To make current constriction compatible with heat dissipation by effecting current constriction using amorphous semiconductor layer of high resistance. CONSTITUTION:A semiconductor laser is composed of an N type InP substrate 11, an N-type InP buffer layer 12, an InGaAsP active layer 13, a P-type InP clad layer 14, an amorphous Si layer 15. a Ti barrier layer 16, an Au/Zn electrode 17, and an Au/Sn electrode 18. For example, when the area of the Au/Zn electrode 17 is 20.0mum and the thickness of the amorphous Si layer 15 is 0.5mum, a resistance will be 10OMEGA and a complete current constriction can be effected. Also, whereas the heat conductivity of InP is 0.7W/cm.deg, that of the amorphous Si layer 15 is as high as 7W/cm.deg and a good heat dissipation effect can be obtained. |
| 公开日期 | 1987-01-31 |
| 申请日期 | 1985-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83726]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,SHIBATA ATSUSHI. Semiconductor light emitting element. JP1987023184A. 1987-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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