Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MANNOU MASAYA; ONAKA SEIJI |
| 发表日期 | 1992-12-22 |
| 专利号 | JP1992369884A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to be enhanced in service life by a method wherein polycrystal is prevented from being deposited when a current constriction layer is buried in both the sides of a mesa structure provided with a clad layer. CONSTITUTION:A p-GaAs contact layer 9 triangular in cross section is formed on a stripe section 4a mesa-shaped in cross section. The surface of the p-GaAs contact layer 9 is a non-growth plane. An n-AlXGa1-XAs buried layer 8 is buried in both the sides of the stripe section 4a to serve as a current constriction layer. As the surface of the p-GaAs contact layer 9 is a non-growth plane, the buried layer is never grown on the surface of the contact layer 9. Therefore, the p-GaAs contact layer 9 can be substituted for a conventional oxide film mask when the n-AlXGa1-XAs buried layer 8 is formed on both the sides of the stripe section 4a. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83728]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MANNOU MASAYA,ONAKA SEIJI. Semiconductor laser and manufacture thereof. JP1992369884A. 1992-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。