Semiconductor laser element
文献类型：专利
| 作者 | MORI YOSHIHIRO; SHIBATA ATSUSHI |
| 发表日期 | 1988-02-13 |
| 专利号 | JP1988033887A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce leakage currents, and to lead out an upper surface electrode proper for a planar type OEIC by minimizing the area of a homogeneous P-N junction in a clad layer and limiting the homogeneous P-N junction only near a section just above an active layer. CONSTITUTION:An InGaAsP active layer 101, a P clad layer 102, an N buried layer 103, an N clad layer 104, a P diffusion layer 105 formed by diffusing zinc in order to ensure the width of a P electrode 9 sufficiently widely, and a cap layer 106 for lowering contact resistance are shaped onto an N-type InP substrate 107. The width W of the P diffusion layer 105 is acquired by adding the width L of a contact section with the P electrode 109 and the alignment precision of a mask aligner, and brought normally to approximately W=10 micron to L=5 micron. The width W of the layer 105 is quintuple as large as 2 micron of the width of the active layer, and is made smaller than conventional examples by approximately two figures. Accordingly, the quantity of currents flowing through a homogeneous P-N junction in the clad layer 102 is inhibited, and operating currents can be reduced while both P and N electrodes can be shaped on the epitaxial growth side surface of, an element, keeping the flatness of the epitaxial growth side surface. |
| 公开日期 | 1988-02-13 |
| 申请日期 | 1986-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83731]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MORI YOSHIHIRO,SHIBATA ATSUSHI. Semiconductor laser element. JP1988033887A. 1988-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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