Semiconductor laser
文献类型：专利
| 作者 | UMEDA JIYUNICHI; NAKAMURA MICHIHARU; AIKI KUNIO |
| 发表日期 | 1986-01-24 |
| 专利号 | JP1986016593A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser, manufacture thereof is easy and an oscillation form thereof is stabilized and which has high reliability, with excellent reproducibility by forming a stepped section to the thickness of a semiconductor layer on at least a boundary between a light-emitting region and a section corresponding to regions except said region in at least one layer of second and third semiconductor layers having double hetero-structure. CONSTITUTION:A second semiconductor layer 12 with a projecting section, a first semiconductor layer 13 and a third semiconductor layer 14 are formed onto a substrate crystal 11 to which a recessed groove is shaped, and both sides of the first semiconductor layer 13 from which laser oscillation is generated are sandwiched by the second and third semiconductor layers 12, 14 having forbidden band width larger than the layer 13 and a refractive index smaller than the layer 13, thus shaping double hetero-structure in which carriers and photons are confined to the first semiconductor layer 13 at high density. The thickness of the second semiconductor layer 12 is reduced in an extent that one part of waveguide beams along the first semiconductor layer 13 is projected to the substrate 11 in a thin section, and made sufficiently larger than the thin section in thick sections. According to such structure, the titled laser functions as a value equivalent to a waveguide in which a refractive index is changed or the gain loss of beams is altered or both are varied in the (x) direction of a waveguide layer. |
| 公开日期 | 1986-01-24 |
| 申请日期 | 1984-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | UMEDA JIYUNICHI,NAKAMURA MICHIHARU,AIKI KUNIO. Semiconductor laser. JP1986016593A. 1986-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。