Quantum well semiconductor laser element
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1991-02-14 |
| 专利号 | JP1991034591A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce a threshold electric current and improve quantum efficiency by providing optical confinement layers respectively at both faces of an active layer and allowing each optical confinement layer to be made of at least two layers consisting of each GaxIn1-xAsyP1-y layer having refractive indexes that are different between these layers within a specific range. CONSTITUTION:In a quantum well semiconductor laser element in which a GaInAsP system semiconductor layer containing an active layer consisting of quantum well and barrier layers is provided on an InP substrate, each optical confinement layer is provided at both faces of the active layer. Its optical confinement layer is made of at least two layers consisting of each GaxIn1-xAsyP1-y layer (0 |
| 公开日期 | 1991-02-14 |
| 申请日期 | 1989-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Quantum well semiconductor laser element. JP1991034591A. 1991-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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