Semiconductor laser device
文献类型：专利
| 作者 | TAKESHIMA MASUMI |
| 发表日期 | 1987-02-24 |
| 专利号 | JP1987042587A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize the mode of a laser light by a method wherein a stripe shape current constriction region, whose dimensions are varied with a period of a half integer times of the laser light wavelength in a material, is provided along the longitudinal direction of a laser cavity. CONSTITUTION:A Zn diffused layer 1 is so formed as to have a stripe shape whose dimensions are 10mum wide and 0.48mum long at the wide parts and 4mum wide and 0.48mum long at the narrow parts and the length of a cavity is 250mum. By making an electrode 7 positive, positive holes are injected from the Zn diffused layer into a GaAs activation layer 4 and blocked by an N-type GaAs layer 2. Then the positive holes are concentrated directly below the layer 1 and induce layer operation by coupling with electrons supplied from an electrode 8. The gain varies periodically along the longiyudinal direction of the cavity and an effective refractive index also varies with the same period. This period is 0.48X2 which is four times of the laser wavelength in GaAs. Therefore, oscillations of many vertical modes with various wavelengths are intensely suppressed so that the mode can be stabilized. P-type and N-type Ga0.6Al0.4As cladding layers 3 and 5 confine introduced positive holes and electrons in the activation layer 4 and reduce the operation current. |
| 公开日期 | 1987-02-24 |
| 申请日期 | 1985-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83736]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Semiconductor laser device. JP1987042587A. 1987-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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