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文献类型：专利
| 作者 | ISHIKAWA HIROSHI; TAKAGI NOBUYUKI; IMAI HAJIME |
| 发表日期 | 1988-05-12 |
| 专利号 | JP1988022478B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To finish liquid epitaxial growth at once to contrive to improve yield, by forming a groove from the beginning on a substrate next to apply each semiconductor layer for continuous epitaxial growth. CONSTITUTION:A groove 11a is formed on an n-InP substrate 11 next to adopt liquid epitaxial growing method for the growth of a p-InP current preventing layer 12 and an n-InP clad layer 13 inside and outside of the groove. Further, an In1-xGaxAs1-yPy active layer 14 is formed in the groove next to grow a p-InP clad layer 15. Thus, the groove 11a is perfectly burried with the surface flat. Further, a p-In1-zGazAs1-sPs contact layer 16 is grown. In this step, a series of continuous epitaxial growth are finished. The continuous epitaxial growing method at once improves the manufacturing yield. |
| 公开日期 | 1988-05-12 |
| 申请日期 | 1981-05-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83737]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ISHIKAWA HIROSHI,TAKAGI NOBUYUKI,IMAI HAJIME. -. JP1988022478B2. 1988-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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