Semiconductor laser
文献类型：专利
| 作者 | TSURUTA TORU; HIRAYAMA NORIYUKI; OSHIMA MASAAKI |
| 发表日期 | 1987-12-08 |
| 专利号 | JP1987282481A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain easily a single longitudinal mode laser by a method wherein a part of the clad layer at the site corresponding to the internal reflecting surface of the IRI laser is replaced with a material having different refractivity. CONSTITUTION:An n-type InP buffer layer 2, a p-type InP current block layer 3, an n-type InP current block layer 4 and an n-type InGaAsP mask layer 5 for etching are grown according to first growth on an n-type InP substrate Then SiO2 is deposited on the etching mask layer 5, a window is opened in a stripe type according to photo etching, and the etching mask layer 5 is exposed in the stripe type. A resist stripe is formed vertically on the SiO2 stripe in succession, the n-type InGaAsP layer 5 is etched according to an H2SO4 etchant using the SiO2 stripe and the resist as masks, a stripe type window of SiO2 is provided, and moreover a part of the n-type InGaAsP layer is left in the window. Then etching is performed using HCl as an etchant and using a mask, and after the n-type InGaAsP layer 5 in the SiO2 stripe type window is etched to be removed, etching is performed again to form a projecting part 12. |
| 公开日期 | 1987-12-08 |
| 申请日期 | 1986-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU,HIRAYAMA NORIYUKI,OSHIMA MASAAKI. Semiconductor laser. JP1987282481A. 1987-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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