Semiconductor laser
文献类型：专利
| 作者 | OSHIMA HIROYUKI |
| 发表日期 | 1987-07-28 |
| 专利号 | JP1987171181A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To control the presence of the oscillation of a semiconductor laser by forming first stripe structure containing an active layer and second and third stripe structure capable of modulating refractive indices on both sides of the first stripe structure. CONSTITUTION:An N-GaAs buffer layer 202 and an N-AlGaAs clad layer 203 are shaped onto a substrate 20 Index modulation regions 205 are formed on both sides of an active layer 204. A P-AlGaAs clad layer 206 and a P-GaAs cap layer 207 are shaped onto the active layer 204, and connected to an electrode A through insulating films 208 consisting of SiO2, SiNx, etc. N-AlGaAs 209 and N-GaAs 210 are formed onto the index modulation regions 205, and connected to electrodes B. Voltage higher than the electrode A is applied to the electrodes B at all times so that leakage currents do not flow among the electrodes. A, B. Accordingly, a semiconductor laser can be modulated at a single mode while inrush currents are kept constant. |
| 公开日期 | 1987-07-28 |
| 申请日期 | 1986-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83741]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI. Semiconductor laser. JP1987171181A. 1987-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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