Semiconductor laser device
文献类型：专利
| 作者 | MIYAUCHI NOBUYUKI |
| 发表日期 | 1991-08-26 |
| 专利号 | JP1991195073A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high reliability in a high output operation by a method wherein a real refractive index waveguide mechanism is provided inside a resonator and the shape of an active layer is warped inside the resonator and made to be flat near a light emitting end to form a window region. CONSTITUTION:A trench 32 is formed in a portion corresponding to the light emitting region inside a resonator on an n-type GaAs substrate 3 Then an n-type Al0.43Ga0.57As cladding layer 15, an Al0.13Ga0.87As active layer 41, a p-type Al0.43Ga0.57As cladding layer 13 and a p-type GaAs contact layer 42 are successively built up. At that time, the shape of the active layer 41 is warped on the trench 32 are made to be flat near a light emitting end to form a window region. Then mesa-etching is applied to the inside of the resonator so as to reach the bottom of the trench 32 except the neighborhoods of the end surfaces of the resonator and, after that, an Al0.43Ga0.57As high resistance buried layer 43 is built up. With this constitution, a temperature rise and the deterioration of the inside of the resonator caused by the light absorption at the light emitting end can be avoided and a high reliability can be obtained in a high output operation. |
| 公开日期 | 1991-08-26 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83744]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MIYAUCHI NOBUYUKI. Semiconductor laser device. JP1991195073A. 1991-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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