Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUJII TAKUYA; YAMAZAKI SUSUMU |
| 发表日期 | 1990-11-20 |
| 专利号 | JP1990283084A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To avoid a thermal deformation and to form an optical guide layer thereon while maintaining the height of a protrusionlike diffraction grating provided on a substrate at a predetermined value by vapor growing at a low temperature by an atomic layer epitaxial growth (ALE) method. CONSTITUTION:Part 31 of an InGaAsP layer for forming an optical guide layer 3 is formed on an InP substrate 1 provided with a diffraction grating 2, the grating 2 is covered therewith, and the residue 32 of the layer 3, an active layer 4 and a clad layer 5 are then sequentially formed by a normal MOVPE method. The grating 2 is not thermally deformed at 400 deg.C, and not thermally deformed at 400-650 deg.C after it is covered with an InGaAsP layer 3 Accordingly, the grating can preserve a predetermined height of the state provided initially on the substrate. The residue 32 of the layer and the other layer 4, the layer 5, etc., are formed by a normal MOVPE method. |
| 公开日期 | 1990-11-20 |
| 申请日期 | 1989-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83749]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUJII TAKUYA,YAMAZAKI SUSUMU. Manufacture of semiconductor laser. JP1990283084A. 1990-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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