Semiconductor laser device
文献类型：专利
| 作者 | ISHINO MASAKAZU; TODOROKI SATORU |
| 发表日期 | 1988-03-14 |
| 专利号 | JP1988058888A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the monitoring accuracy and decrease the assembling cost by forming laser and photo diodes in one on a single chip. CONSTITUTION:An n-type Si substrate 6 permits an n-type GaAs buffer layer 7, an n-type GaAlAs clad layer 8, a GaAs active layer 9 as well as a p-type GaAlAs clad layer 10 to carry out epitaxial growth in sequence on its substrate and layers 7-10 with the exception of a portion are removed by etching and then an electrode 11 is mounted at their remaining portions to form a laser diode. Once a p-type region 12 and an ohmic electrode 13 are formed at the exposed surface of the substrate 6, a pn junction is made between the n-type Si substrate 6 and respective layers and then the laser diode and a photo diode are formed in one on a chip. As a result, laser beams emitted out of the laser diode can be efficiently taken in the light-receiving surface of the photo diode and the above procedures serve the purpose of improving the light output monitoring system with high accuracy as well as of simplifying the process after carrying out assembling works and so on. |
| 公开日期 | 1988-03-14 |
| 申请日期 | 1986-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83752]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ISHINO MASAKAZU,TODOROKI SATORU. Semiconductor laser device. JP1988058888A. 1988-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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