Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | WAKITA KOICHI; KURUMADA KATSUHIKO; NAWATA KIYOSHI |
| 发表日期 | 1991-03-18 |
| 专利号 | JP1991062587A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To explain design indexes of dielectric thin films, obtain a plurality of longitudinal modes, and facilitate the control of refractive index of the dielectric thin film, by forming the dielectric thin films having specified refractive indexes and thicknesses on the output end surfaces of a semiconductor laser diode. CONSTITUTION:A clad layer 12, an active layer 13, a clad layer 14, and a cap layer 15 are formed in order on a semiconductor substrate 1 Electrodes 16, 17 are formed on both surfaces of the above multilayer structure, and reflecting surfaces 18, 19 are constituted on semiconductor cleavage surfaces on both end surfaces of the active layer 13, thereby forming a laser resonator. Dielectric thin films 21, 22 of, e.g. SiN are formed on both end surfaces 18, 19. The refractive indexes of the thin films are nearly equal to the root of the refractive index of the active layer 13, and the thicknesses are set in the range of lambda0/4-lambda0/30+ or -lambda0/100. |
| 公开日期 | 1991-03-18 |
| 申请日期 | 1990-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83754]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | WAKITA KOICHI,KURUMADA KATSUHIKO,NAWATA KIYOSHI. Semiconductor device and manufacture thereof. JP1991062587A. 1991-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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