Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAKA TOSHIO |
| 发表日期 | 1990-08-24 |
| 专利号 | JP1990213190A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To control the thickness of a desired part of an epitaxial layer by forming a trench part in the reverse side of a semiconductor substrate and by growing the epitaxial layer on this semiconductor substrate. CONSTITUTION:Trench parts 11 to 13 are formed in appropriate depths and forms and at appropriate positions in the back of a GaAs substrate 1 by etching or the like. In this GaAs substrate 1, the part wherein the trench part 11 is formed and a part wherein it is not formed are put under different conditions of heat conduction and others. Concretely, the surface temperature of the part of the substrate wherein the trench part 11 exists is lower than that of the part wherein no trench part 11 exists. When an epitaxial growth is made on this GaAs substrate 1, therefore, the growth is thin in the part of low temperature, while it is thick in the part of high temperature. Accordingly, the epitaxial layer can be made to have a local film thickness distribution. |
| 公开日期 | 1990-08-24 |
| 申请日期 | 1989-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83757]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO. Manufacture of semiconductor device. JP1990213190A. 1990-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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