Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; ONO YUICHI; KAJIMURA TAKASHI |
| 发表日期 | 1989-07-20 |
| 专利号 | JP1989183182A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To eliminate adverse influence, such as displacement of a mask to be aligned in a photolithographic step, and to obtain low noise characteristic by employing again an etching mask for forming a mesa structure for a photoconductive wave, and selectively crystal growing a current narrowing layer. CONSTITUTION:A stripelike dielectric mask 5 provided on a third semiconductor layer 4 is operated as both a mask for forming a mesa for a photoconductive wave and a mask for selectively crystal-growing a fourth semiconductor current narrowing layer 9 to form both in a self-alignment manner. Thus, a problem of the displacement of the mask in a photolithography is eliminated, and the thickness of the layer 4 is so arbitrarily set in a stripe outside region as to effectively cause a pulsation advantageous for reducing the noise of a semiconductor laser in the element, thereby obtaining low noise characteristic. |
| 公开日期 | 1989-07-20 |
| 申请日期 | 1988-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83758]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,ONO YUICHI,KAJIMURA TAKASHI. Semiconductor laser element. JP1989183182A. 1989-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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