Semiconductor laser
文献类型：专利
| 作者 | UKITA, MASAKAZU; ISHIBASHI, AKIRA |
| 发表日期 | 2001-05-15 |
| 专利号 | USR37177 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(Q) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts alpha and beta are defined by:the point (alpha,beta) exists in an area on the alpha-beta plane surrounded by the straight line alpha=0, the straight line beta=0, and the curve ((2ln t-1)/t, (1-ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided. |
| 公开日期 | 2001-05-15 |
| 申请日期 | 1999-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83759]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | UKITA, MASAKAZU,ISHIBASHI, AKIRA. Semiconductor laser. USR37177. 2001-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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