Semiconductor laser element
文献类型：专利
| 作者 | SASAKI KAZUAKI; SUYAMA NAOHIRO; MORIMOTO TAIJI; KONDO MASAFUMI; KONDO MASAKI; YAMAMOTO SABURO |
| 发表日期 | 1990-07-23 |
| 专利号 | JP1990187089A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold current and to enable self-excited oscillation in a wide output range by forming an active layer of multi quantum well structure and by setting an equivalent refraction factor difference between a region near a current injection path and a region of the outside thereof to a specified value. CONSTITUTION:A first clad layer 3, a first optical guide layer 4, an active layer 5 of multi quantum well structure, a second optical guide layer 4', and a second clad layer 6 are laminated on a semiconductor substrate A thickness of the clad layer 6 at an outside of a ridge section 31 is made 0.2 to 0.6mum and an equivalent refraction factor difference between an outside and an inside of a region near the ridge section 31 is made 3X10 to 5X10. A light confinement section is formed in a region near an emission edge face by breaking the active layer 5 of multi quantum well structure. According to this constitution, an oscillation threshold current can be reduced and self-excited oscillation can be realized in a wide output range since the active layer 5 is provided with a quantum well structure. Moreover, astigmatic difference can be reduced by forming a light confinement section to the region near the emission edge face and thereby strengthening a refraction factor waveguide mechanism. |
| 公开日期 | 1990-07-23 |
| 申请日期 | 1989-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83761]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SASAKI KAZUAKI,SUYAMA NAOHIRO,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1990187089A. 1990-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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