Manufacture of semiconductor laser
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1989-09-21 |
| 专利号 | JP1989236676A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve a laser of this design in reproductivity and yield by a method wherein a second crystal growth after the formation of a current constriction groove is made to start from top of a protective layer of AlGaAs which is small in Al content and hard to oxidize. CONSTITUTION:A first conductivity type GaAs semiconductor substrate 1, a first conductivity type AlGaAs clad layer 2, an active layer 3, a second conductivity type AlGaAs clad layer 4, a first conductivity type GaAs block layer 5, a current constriction layer 5a, a second conductivity type GaAs protective layer 6, and an AlGaAs stopper layer 7 are provided. Here, a second crystal growth after the formation of a current constriction groove 5a is made to start from top of the AlyGa1-yAs protective layer 6 which is small in Al content and hard to oxidize, so that a second crystal can be stably grown. By these processes, a semiconductor laser excellent in reproductivity and yield can be obtained. |
| 公开日期 | 1989-09-21 |
| 申请日期 | 1988-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83762]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Manufacture of semiconductor laser. JP1989236676A. 1989-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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