Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA, SHINICHI; KAJIMURA, TAKASHI |
| 发表日期 | 1994-03-16 |
| 专利号 | EP0285026B1 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | In a semiconductor laser device having an active layer (3) and clad layers (2, 4), lens-like portions (7, 10) which magnify radiation are formed in the active layer (3) and/or the clad layer (4) where the radiation leaks, thereby making it possible to enlarge a stripe width and to produce a fundamental mode oscillation of high output. Further, a lens-like portion which condenses the radiation is formed at an end face of an emission port for a laser beam, thereby making it possible to narrow the radiant angle of the laser beam. |
| 公开日期 | 1994-03-16 |
| 申请日期 | 1988-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | NAKATSUKA, SHINICHI,KAJIMURA, TAKASHI. Semiconductor laser device. EP0285026B1. 1994-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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