Manufacture of optical semiconductor element
文献类型：专利
| 作者 | AKIBA SHIGEYUKI; SUZUKI MASATOSHI; TANAKA HIDEAKI; UKO KATSUYUKI |
| 发表日期 | 1989-08-10 |
| 专利号 | JP1989199485A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor element |
| 英文摘要 | PURPOSE:To enable a semi-insulating semiconductor to grow stably and simply as it is in a buried state by a method wherein an element which forms a deep impurity level or its chemical compound is formed on the surface of an optical waveguide, and the above element is introduced at a process that a high resistive semiconductor is buried into a part or the whole of the side face of the optical waveguide layer. CONSTITUTION:Optical waveguide layers composed of an optical waveguide layer 3 and other waveguide layers formed of clad layers 2 and 4 whose refractive indexes are smaller than that of the waveguide layer 3 are provided, where at least the optical waveguide layer 3 out of the waveguide layers is formed into a mesa shape, and when an optical semiconductor element is manufactured through a process that a high resistive semiconductor is buried into the side face of the mesa-shaped optical waveguide layer 3, an element 12 which forms a deep impurity level or its chemical compound is formed on the face of the above optical waveguide layer 3 and the high resistive semiconductor 6 is buried into a part or the whole of the side face of the waveguide layer 3 by introducing the element 12 into a semiconductor of non-high resistance at a process that the high resistive semiconductor 6 is buried into a part or the whole of the side face of the waveguide layer 3. For instance, an element such as the element which forms a deep impurity level is iron. |
| 公开日期 | 1989-08-10 |
| 申请日期 | 1988-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,SUZUKI MASATOSHI,TANAKA HIDEAKI,et al. Manufacture of optical semiconductor element. JP1989199485A. 1989-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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