Semiconductor laser device
文献类型：专利
| 作者 | OOISHI AKIO; KAYANE NAOKI |
| 发表日期 | 1984-11-27 |
| 专利号 | JP1984208883A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable to reduce the noise of a semiconductor laser efficiently and stably by superposing a high frequency current on a semiconductor laser element having a structure that the transverse mode of said element is controlled mainly by the difference of refractive indices and further the carrier density of an N type enclosed layer at a specific value or less. CONSTITUTION:The titled device is provided with the semiconductor laser element 4 having the structure that the lateral mode of said element is controlled mainly by the difference of refractive indices and further the carrier density of the N type enclosed layer (so-called clad layer) at 7X10cm or less and with means 1-3 to superpose the high frequency current on said element 4. For example, the circuit is composed of a high frequency oscillator 1, a capacitor 2, a high frequency cut-off coil 3, said element 4 and a DC power source 5. When the frequency of the superposed high frequency current becomes over 400MHz, the effect of noise inhibition can be obtained, however, it is more effective at a frequency of 600MHz-800MHz. |
| 公开日期 | 1984-11-27 |
| 申请日期 | 1983-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83774]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOISHI AKIO,KAYANE NAOKI. Semiconductor laser device. JP1984208883A. 1984-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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