Semiconductor light emitting element
文献类型：专利
| 作者 | KATSUI AKINORI; MATSUOKA TAKASHI |
| 发表日期 | 1990-11-30 |
| 专利号 | JP1990291183A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To manufacture a high efficient light emitting element by providing ZnSeSTe crystal layers deposited on an LiF single crystal substrate in lattice matching. CONSTITUTION:The title semiconductor light emitting element is provided with a semiconductor crystal layers comprising ZnSexSyTez (x+y+z=1 and 0<=x, y, z<=1) deposited on an LiF single crystal substrate in lattice alignment. The said element is composed of the LiF (100) substrate 1, a nitrogen doped p type ZnSe layer 2, an iodine doped n type ZnSe layer 3, an n type layered ohmic electrode 4, a p type layered ohmic electrode 5 while the whole ZnSe layer is a semiconductor layer epitaxially deposited on the substrate in lattice matching. Then, holes and electrons are implanted in a light emitting layer by impressing electrodes with positive and negative voltage and then blue colored emitted light in wavelength of around 460nm can be observed to assure the outer differential quantum efficiency of around 0.5%. Through these procedures, a large current can be impressed, thereby enabling the title element in high blue colored light emitting efficiency to be manufactured. |
| 公开日期 | 1990-11-30 |
| 申请日期 | 1989-05-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83777]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KATSUI AKINORI,MATSUOKA TAKASHI. Semiconductor light emitting element. JP1990291183A. 1990-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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