Manufacture of semiconductor laser
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI |
| 发表日期 | 1986-10-31 |
| 专利号 | JP1986245591A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To simplify a manufacturing process, and to improve reliability by a method wherein an optical absorption layer is formed in laminated structure of two kinds or more of thin- layers consisting of compound semiconductors of a different kind, an impurity is introduced to one part of the laminated structure in response to the upper section of a section as a light-emitting operation region in an active layer, the mixed crystal layer of the composition of a semiconductor layer is formed and an optical absorption effect is dissipated. CONSTITUTION:A first clad layer 12, an active layer 13, a lower layer clad layer 14A in a second clad layer, an optical absorption layer 15, an upper-layer clad layer 14B and a cap layer 16 are grown on a base body 11 in an epitaxial manner. Two kinds or more of semiconductor thin-layers 15A, 15B are grown repeatedly in the epitaxial manner as the optical absorption layer 15. Laminated structure of layers having a band gap larger than the active layer 13 and layers having a band gap smaller than the active layer 13 is shaped at that time. An impurity is diffused to one part of the optical absorption layer 15 on a section as an operating region in the active layer 13 in a striped manner, and a non-absorbing section 25 by the mixed crystal of each constituent element of the layers 15A, 15B is shaped brought into contact with the layer 14A. An insulating layer 17 is formed onto the layer 16, an electrode 18 is shaped through an electrode window 17a, and another electrode 19 is shaped onto another surface of the base body 11, thus acquiring a semiconductor laser. |
| 公开日期 | 1986-10-31 |
| 申请日期 | 1985-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83783]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI. Manufacture of semiconductor laser. JP1986245591A. 1986-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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