Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | SAGARA MINORU |
| 发表日期 | 1985-06-19 |
| 专利号 | JP1985113486A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify the manufacturing process by preventing current leakage by a method wherein, after liquid phase epitaxial growth of an EH laser, a current blocking layer made of semiconductor crystals of the reverse conductivity type to that of a high resistor or the second clad is successively grown only on a dummy region. CONSTITUTION:Liquid phase crystal growth blocking masks 22 of U width having main stripe windows of S width and the dummy region 21 of large width are formed on the [100] surface of a GaAs substrate 19. When GaAlAs is kept epitaxially growing in liquid phase on this substrate, the crystals 23 grow successively. At this time, the crystal growth of the second clad or an ohmic layer until a curve A comes to saturation and the successive crystal growth of the current blocking layer allow this layer to grow only on the dummy region, not on the main strip window. Therefore, the formation of insulation films and the man- hour for boring insulation film are unnecessitated in forming an electrode. |
| 公开日期 | 1985-06-19 |
| 申请日期 | 1983-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83788]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | SAGARA MINORU. Semiconductor laser device and manufacture thereof. JP1985113486A. 1985-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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